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IXTY1R6N100D2 IXTA1R6N100D2
IXTP1R6N100D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-252 AA Outline
g fs
C iss
C oss
C rss
V DS = 30V, I D = 0.8A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
0.65
1.10
645
43
11
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = ± 5V, V DS = 500V, I D = 0.8A
R G = 5 Ω (External)
27
65
34
41
ns
ns
ns
ns
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Q g(on)
27.0
nC
Dim.
Millimeter
Inches
Q gs
Q gd
V GS = 5V, V DS = 500V, I D = 0.8A
1.6
13.5
nC
nC
A
A1
Min. Max.
2.19 2.38
0.89 1.14
Min. Max.
0.086 0.094
0.035 0.045
R thJC
R thCS
TO-220
0.50
1.25 ° C/W
° C/W
A2
b
b1
b2
0
0.64
0.76
5.21
0.13
0.89
1.14
5.46
0
0.025
0.030
0.205
0.005
0.035
0.045
0.215
Safe-Operating-Area Specification
Symbol Test Conditions
Characteristic Values
Min. Typ. Max.
c
c1
D
D1
E
0.46
0.46
5.97
4.32
6.35
0.58
0.58
6.22
5.21
6.73
0.018
0.018
0.235
0.170
0.250
0.023
0.023
0.245
0.205
0.265
SOA
V DS = 800V, I D = 75mA, T C = 75 ° C, Tp = 5s
60
W
E1
e
4.32 5.21
2.28 BSC
0.170 0.205
0.090 BSC
e1
4.57 BSC
0.180 BSC
Source-Drain Diode
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1
L2
L3
0.64
0.89
2.54
1.02
1.27
2.92
0.025
0.035
0.100
0.040
0.050
0.115
V SD
t rr
I RM
Q RM
I F = 1.6A, V GS = -10V, Note 1
I F = 1.6A, -di/dt = 100A/ μ s
V R = 100V, V GS = -10V
0.8
970
9.96
4.80
1.3
V
ns
A
μ C
TO-220 Outline
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-263 Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
4.06
4.83
.160
.190
b
b2
c
0.51
1.14
0.40
0.99
1.40
0.74
.020
.045
.016
.039
.055
.029
Pins:
1 - Gate
3 - Source
2 - Drain
c2
D
D1
E
1.14
8.64
8.00
9.65
1.40
9.65
8.89
10.41
.045
.340
.280
.380
.055
.380
.320
.405
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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